TMR-Based Logic-in-Memory Circuit for Low-Power VLSI

Akira MOCHIZUKI  Hiromitsu KIMURA  Mitsuru IBUKI  Takahiro HANYU  

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E88-A   No.6   pp.1408-1415
Publication Date: 2005/06/01
Online ISSN: 
DOI: 10.1093/ietfec/e88-a.6.1408
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Papers Selected from 2004 International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC 2004))
Category: 
Keyword: 
MRAM,  TMR device,  dynamic current-mode logic,  logic function,  sum of absolute differences,  

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Summary: 
A tunneling magnetoresistive(TMR)-based logic-in- memory circuit, where storage functions are distributed over a logic-circuit plane, is proposed for a low-power VLSI system. Since the TMR device is regarded as a variable resistor with a non-volatile storage capability, any logic functions with external inputs and stored inputs can be performed by using the TMR-based resistor/transistor network. The combination of dynamic current-mode circuitry and a TMR-based logic network makes it possible to perform any switching operations without steady current, which results in power saving. A design example of an SAD unit for MPEG encoding is discussed, and its advantages are demonstrated.