For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
High Sensitivity 900-MHz ISM Band Transceiver
Nobuyuki ITOH Ken-ichi HIRASHIKI Tadashi TERADA Makoto KIKUTA Shin-ichiro ISHIZUKA Tsuyoshi KOTO Tsuneo SUZUKI Hidehiko AOKI
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2005/02/01
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
900 MHz, ISM transceiver, BiCMOS, EM simulation,
Full Text: PDF(960.3KB)>>
Integrated 900-MHz ISM band transceiver LSI for analog cordless telephone has been realized by cost-effective process technology with sufficient performance. This LSI consisted of fully integrated transceiver, from RF-LNA to audio amplifier for RX chain, from microphone's amplifier to RF-PA for TX chain, and integrated RX- and TX-LO consisting of PLLs and VCOs. In view of narrow signal bandwidth with analog modulation, extremely low phase noise at low offset frequency from carrier was required for integrated VCO. Also, in view of fully duplex operations, signal isolation between TX and RX was required. Despite such a high integration and high performance, chip cost had to be minimized for low-cost applications. The 12-dB SINAD RX sensitivity was -111.2 dBm, the output power of TX was +3 dBm, and the phase noise of integrated VCO was -77 dBc/Hz at 3 kHz offset away from carrier. The current consumption at fully duplex operation was 76 mA at 3.6 V power supply. The chip was realized by 0.8 µm standard silicon BiCMOS process.