For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Efficient and Large-Current-Output Boosted Voltage Generators with Non-Overlapping-Clock-Driven Auxiliary Pumps for Sub-1-V Memory Applications
Kyeong-Sik MIN Young-Hee KIM Daejeong KIM Dong Myeong KIM Jin-Hong AHN Jin-Yong CHUNG
IEICE TRANSACTIONS on Electronics
Publication Date: 2004/07/01
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Electronic Circuits
charge pumps, voltage generators, DRAM, low voltage,
Full Text: PDF>>
A new CMOS positive charge pump (NCP-1) is proposed and compared with the conventional pump in this paper. The comparison indicates that this NCP-1 scheme delivers 1.6 times larger output current into the load with roughly 10% area penalty than the conventional pump. To alleviate the area overhead of NCP-1, another new NCP-2 is proposed, where its current drivability is slightly lower than NCP-1 by as small as 5% but it achieves much smaller layout penalty as small as 2-3% compared with the conventional pump. The effectiveness of NCP-1 is verified experimentally in this paper by using 0.35-µm n-well process technology. These NCP-1 and NCP-2 are useful to DRAMs and NOR-type flash memories with sub-1-V VDD, where their large-output-current nature is favorable.