MMIC Power Amplifier with on Chip Adaptive Predistortion Function for W-CDMA Mobile Terminals

Joon Hyung KIM
Ji Hoon KIM
Youn Sub NOH
Chul Soon PARK

IEICE TRANSACTIONS on Electronics   Vol.E87-C    No.7    pp.1192-1196
Publication Date: 2004/07/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Microwaves, Millimeter-Waves
power amplifier,  linearizer,  W-CDMA,  heterojunction bipolar transistor (HBT),  MMIC,  

Full Text: PDF>>
Buy this Article

This paper proposes a new on-chip linearizer self-adapting to the input power and its implementation to high linear monolithic microwave integrated circuit (MMIC) power amplifier for 1.95 GHz wide-band code division multiple-access (W-CDMA) system. The linearizer consists of InGaP/GaAs heterojunction bipolar transistor (HBT) active bias circuit and reverse biased junction diode of which dynamic admittance to input power level functions adaptively to control the bias to the amplifier. The proposed linearizer has little insertion power loss, and more importantly, it consumes no additional die area and DC power. The HBT MMIC power amplifier with the integrated linearizer exhibits a maximum output power of 30.3 dBm, a power gain of 27.5 dB, a power added efficiency of 42% at the maximum output power under an operation voltage of 3.4 V, and adjacent channel leakage power ratio of -38 dBc at 27 dBm of output power.