Mobility Reduction Cancellation Technique for OTA Using MOSFETs Operated in Triode and Saturation Regions

Hayato FUJII  Akira HYOGO  Keitaro SEKINE  

IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.6   pp.990-995
Publication Date: 2004/06/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
MOSFET,  OTA,  mobility reduction,  triode region,  saturation region,  

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We propose a novel mobility reduction cancellation technique for an OTA (Operational Transconductance Amplifier). The proposed technique can be easily realized by using conventional OTAs. The proposed OTAs have good linearity. The simulation results show that the THD is less than 1% for 1.8 Vp-p at 3 V supply voltage.