For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Lateral and Vertical Scaling of High-fmax InP-Based HBTs
Shinichi TANAKA Yoshifumi IKENAGA Akira FUJIHARA
IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
HBT, indium phosphide (InP), maximum frequency of oscillation, scaling,
Full Text: PDF(647KB)>>
Design approach to improving fmax of InP-based HBTs by combining lateral scaling (lithographic scaling) and vertical scaling (improving fT) is discussed. An HBT scaling model is formulated to provide means of analyzing the essential impact of scaling on fmax. The model was compared with measurements of single and double heterojunction bipolar transistors with different fT and various emitter sizes. While a high fmax of 313 GHz was achieved using submicron HBT with high fT, it was found that further improvement could have been obtained by reducing the emitter resistance, which has imposed considerable limit on lateral scaling.