A Fully Integrated CMOS RF Front-End with On-Chip VCO for W-CDMA Applications

Hyung Ki AHN  Kyoohyun LIM  Chan-Hong PARK  Jae Joon KIM  Beomsup KIM  

IEICE TRANSACTIONS on Electronics   Vol.E87-C    No.6    pp.1047-1053
Publication Date: 2004/06/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Electronic Circuits
CMOS RF receivers,  frequency synthesizers,  low noise amplifiers,  mixers,  VCOs,  W-CDMA RF front-end,  

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A fully integrated RF front-end for W-CDMA applications including a low noise amplifier, a down conversion mixer, a digitally programmable gain amplifier, an on-chip VCO, and a fractional-N frequency synthesizer is designed using a 0.35-µm CMOS process. A multi-stage ring shaped on-chip LC-VCO exhibiting bandpass characteristics overcomes the limitation of low-Q components in the tank circuits and improves the phase noise performance. The measured phase noise of the on-chip VCO is -134 dBc/Hz at 1 MHz offset. The receiver RF front-end achieves a NF of 3.5 dB, an IIP3 of -16 dBm, and a maximum gain of 80 dB. The receiver consumes 52 mA with a 3-V supply and occupies only 2 mm2 die area with minimal external components.