Simple Analytical Model of CMOS Transimpedance Amplifier to Enhance Operational Bandwidth

Chin-Wei KUO  Chien-Chih HO  Chao-Chih HSIAO  Yi-Jen CHAN  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.6   pp.1040-1046
Publication Date: 2004/06/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Lasers, Quantum Electronics
Keyword: 
transimpedance amplifier,  inductive peaking,  CMOS,  

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Summary: 
This article presents the CMOS transimpedance amplifier (TIA) for gigabits optical communication, where an analytical method for designing a wideband TIA using different inductive peaking technology is introduced. In this study, we derive and analyze the transfer function (Vout/Iin) of the TIA circuit from the equivalent circuit model. By adding the peaking inductor in different locations, the TIA 3-dB bandwidth can be enhanced without sacrificing the transimpedance gain. These TIA designs have been realized by the advanced CMOS process, and the measured results confirm the predictions from the analytic approach, where the inductive peaking is an useful way to enhance the TIA bandwidth.