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Simple Analytical Model of CMOS Transimpedance Amplifier to Enhance Operational Bandwidth
Chin-Wei KUO Chien-Chih HO Chao-Chih HSIAO Yi-Jen CHAN
IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Lasers, Quantum Electronics
transimpedance amplifier, inductive peaking, CMOS,
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This article presents the CMOS transimpedance amplifier (TIA) for gigabits optical communication, where an analytical method for designing a wideband TIA using different inductive peaking technology is introduced. In this study, we derive and analyze the transfer function (Vout/Iin) of the TIA circuit from the equivalent circuit model. By adding the peaking inductor in different locations, the TIA 3-dB bandwidth can be enhanced without sacrificing the transimpedance gain. These TIA designs have been realized by the advanced CMOS process, and the measured results confirm the predictions from the analytic approach, where the inductive peaking is an useful way to enhance the TIA bandwidth.