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Threshold Voltage Mismatch of FD-SOI MOSFETs
Yoshiyuki SHIMIZU Toshimasa MATSUOKA Kenji TANIGUCHI
IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
threshold voltage, FD-SOI, floating body effect, DIBL,
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The threshold voltage mismatch of FD (Fully depleted) SOI (Silicon on insulator) devices have been studied. Floating body MOSFETs operating at high drain voltage show a large mismatch in the threshold voltage compared with body-tied MOSFETs. Those experimental data under different drain voltages indicate that both floating body effect and DIBL (Drain induced barrier lowering) are involved in the threshold voltage mismatch of floating body MOSFETs.