Threshold Voltage Mismatch of FD-SOI MOSFETs

Yoshiyuki SHIMIZU  Toshimasa MATSUOKA  Kenji TANIGUCHI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.6   pp.1013-1014
Publication Date: 2004/06/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
Category: 
Keyword: 
threshold voltage,  FD-SOI,  floating body effect,  DIBL,  

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Summary: 
The threshold voltage mismatch of FD (Fully depleted) SOI (Silicon on insulator) devices have been studied. Floating body MOSFETs operating at high drain voltage show a large mismatch in the threshold voltage compared with body-tied MOSFETs. Those experimental data under different drain voltages indicate that both floating body effect and DIBL (Drain induced barrier lowering) are involved in the threshold voltage mismatch of floating body MOSFETs.