Single Electron Random Number Generator

Hisanao AKIMA  Shigeo SATO  Koji NAKAJIMA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.5   pp.832-834
Publication Date: 2004/05/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Electronic Circuits
Keyword: 
random number generator,  single electron transistor,  Monte Carlo simulation,  

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Summary: 
A random number generator composed of single electron devices is presented. Due to stochastic behavior of electron tunneling process, single electron devices have intrinsic randomness. Using its randomness, a true random number generator can be implemented. Although fluctuation of device parameters degrades the performance of the proposed circuit, we show that the adjustment of the bias voltages can compensate the fluctuation.