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Millimeter-Wave Monolithic GaAs HEMT Medium-Power Amplifier Having Low-Loss, CRC High-Pass Equalizer Circuits
Naoko ONO Ken ONODERA Kazuhiro ARAI Keiichi YAMAGUCHI Hiroyuki YOSHINAGA Yuji ISEKI
IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
K-band, driver amplifier, filter circuit, HEMT,
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A K-band monolithic driver amplifier with equalizer circuits has been developed. It is necessary for the equalizer circuit to be low losses in the high-frequency range and for its S21 values to increase as the operation frequency increases. In order to realize these features, it is desirable for the equalizer to have element location considering high-frequency current flows. In this paper, we present a novel low-loss, high-pass equalizer circuit layout that has superior characteristics in the high-frequency range. We used a high-pass filter as the equalizer circuit and performed a detailed evaluation of the high-frequency characteristics of the filter circuit test element groups (TEGs) for three layout types. It was found that the best filter circuit layout for the three types consisted of two capacitors and one resistor, placed with parallel connections. The resistor is located at the center and the capacitors are located at both sides of the resistor. This filter is called the CRC-type in this paper. An MMIC test sample, a K-band monolithic amplifier with CRC-type filter circuits, was fabricated. The amplifier had a gain of 21.6 dB, a Rollett stability factor K of 28.9, an input VSWR of 1.63, an output VSWR of 1.92, and a 1 dB compressed output power of 22.6 dBm at 26 GHz.