The Maximum Operating Region in SiGe HBTs for RF Power Amplifiers

Akira INOUE  Shigenori NAKATSUKA  Takahide ISHIKAWA  Yoshio MATSUDA  

IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.5   pp.714-719
Publication Date: 2004/05/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
maximum operating region,  measurement,  waveform,  SiGe,  power amplifier,  HBT,  

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The maximum operating region of a SiGe HBT has been experimentally investigated by a direct microwave waveform measurement. Dynamic RF load lines are used as a probe to detect the limit of the RF operation. For the first time, it is found that SiGe HBTs operate beyond the conventional BVceo, while GaAs HBTs cannot survive at that voltage. The conventional BVceo limits the average Vc of the maximum load lines, but has no influence on the peak voltage. Another BVceo measured with a voltage generator is proposed to represent the irreversible avalanche breakdown instead of the conventional one. A pulsed breakdown measurement is also performed to reveal the time constant of the phenomena.