A Wide Range 1.0-3.6 V 200 Mbps, Push-Pull Output Buffer Using Parasitic Bipolar Transistors

Takahiro SHIMADA  Hiromi NOTANI  Yasunobu NAKASE  Hiroshi MAKINO  Shuhei IWADE  

IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.4   pp.571-577
Publication Date: 2004/04/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)
low power consumption,  I/O,  parasitic bipolar transistor,  forward bias,  driver,  level converter,  

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We proposed a push-pull output buffer that maintains the data transmission rate for lower supply voltages. It operates at an internal supply voltage (VDD) of 0.7-1.6 V and an interface supply voltage (VDDX) of 1.0-3.6 V. In low VDDX operation, the output buffer utilizes parasitic bipolar transistors instead of MOS transistors to maintain drivability. Furthermore forward body bias (FBB) control is provided for the level converter in low VDD operation. We fabricated a test chip with a standard 0.15 µm CMOS process. Measurement results indicate that the proposed output buffer achieves 200 Mbps operation at VDD of 0.7 V and VDDX of 1.0 V.