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A Wide Range 1.0-3.6 V 200 Mbps, Push-Pull Output Buffer Using Parasitic Bipolar Transistors
Takahiro SHIMADA Hiromi NOTANI Yasunobu NAKASE Hiroshi MAKINO Shuhei IWADE
IEICE TRANSACTIONS on Electronics
Publication Date: 2004/04/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)
low power consumption, I/O, parasitic bipolar transistor, forward bias, driver, level converter,
Full Text: PDF(740.3KB)>>
We proposed a push-pull output buffer that maintains the data transmission rate for lower supply voltages. It operates at an internal supply voltage (VDD) of 0.7-1.6 V and an interface supply voltage (VDDX) of 1.0-3.6 V. In low VDDX operation, the output buffer utilizes parasitic bipolar transistors instead of MOS transistors to maintain drivability. Furthermore forward body bias (FBB) control is provided for the level converter in low VDD operation. We fabricated a test chip with a standard 0.15 µm CMOS process. Measurement results indicate that the proposed output buffer achieves 200 Mbps operation at VDD of 0.7 V and VDDX of 1.0 V.