A Full-CMOS Single Chip Bluetooth LSI with 1.5 MHz-IF Receiver and Direct Modulation Transmitter

Fumitoshi HATORI  Hiroki ISHIKURO  Mototsugu HAMADA  Ken-ichi AGAWA  Shouhei KOUSAI  Hiroyuki KOBAYASHI  Duc Minh NGUYEN  

IEICE TRANSACTIONS on Electronics   Vol.E87-C    No.4    pp.556-562
Publication Date: 2004/04/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)
Bluetooth,  wireless communication,  CMOS transceiver,  low-IF,  direct modulation,  low power,  

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This paper describes a full-CMOS single-chip Bluetooth LSI fabricated using a 0.18 µm CMOS, triple-well, quad-metal technology. The chip integrates radio and baseband, which is compliant with Bluetooth Core Specification version 1.1. A direct modulation transmitter and a low-IF receiver architecture are employed for the low-power and low-cost implementation. To reduce the power consumption of the digital blocks, it uses a clock gating technique during the active modes and a power manager during the low power modes. The maximum power consumption is 75 mW for the transmission, 120 mW for the reception and 30 µW for the low power mode operation. These values are low enough for mobile applications. Sensitivity of -80 dBm has been achieved and the transmitter can deliver up to 4 dBm.