Ultralow-Voltage MTCMOS/SOI Circuits for Batteryless Mobile System

Takakuni DOUSEKI  Masashi YONEMARU  Eiji IKUTA  Akira MATSUZAWA  Atsushi KAMEYAMA  Shunsuke BABA  Tohru MOGAMI  Hakaru KYURAGI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E87-C    No.4    pp.437-447
Publication Date: 2004/04/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)
Category: 
Keyword: 
ultralow voltage,  ultralow power,  MTCMOS/SOI,  batteryless,  ambient energy,  

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Summary: 
This paper describes an ultralow-power multi-threshold (MT) CMOS/SOI circuit technique that mainly uses fully-depleted MOSFETs. The MTCMOS/SOI circuit, which combines fully-depleted low- and medium-Vth CMOS/SOI logic gates and high-Vth power-switch transistors, makes it possible to lower the supply voltage to 0.5 V and reduce the power dissipation of LSIs to the 1-mW level. We overview some MTCMOS/SOI digital and analog components, such as a CPU, memory, analog/RF circuit and DC-DC converter for an ultralow-power mobile system. The validity of the ultralow-voltage MTCMOS/SOI circuits is confirmed by the demonstration of a self-powered 300-MHz-band short-range wireless system. A 1-V SAW oscillator and a switched-capacitor-type DC-DC converter in the transmitter makes possible self-powered transmission by the heat from a hand. In the receiver, a 0.5-V digital controller composed of a 8-bit CPU, 256-kbit SRAM, and ROM also make self-powered operation under illumination possible.