Crystallization and Conductivity of ReO3 Thin Films Prepared by 90Off-Axis RF Magnetron Sputtering Method

Nobuyuki IWATA  Kumiko FUKAI  Hiroshi YAMAMOTO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.2   pp.223-226
Publication Date: 2004/02/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Oxide Thin Films by Sputtering)
Category: 
Keyword: 
ReO3,  conductivity,  post-anneal,  reduction,  infinite layer,  

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Summary: 
We investigated growth conditions of the ReO3 thin films, as a first step of establishment of artificial superconducting multi-layer with the infinite layer cuprate and ReO3. The layers of ReO3 were expected to work as a charge reservoir block. The films were deposited from a Re metal target by off-axis reactive sputtering. Conductive and preferentially (100) oriented ReO3 thin films were obtained by in-situ post-annealing. The lowest resistivity was 4.4 10-5 ohmcm at room temperature.