Low Temperature Deposition of Indium Tin Oxide Thin Films by Low Voltage Sputtering in Various Rare Gases

Yoichi HOSHI
Hidehiko SHIMIZU

IEICE TRANSACTIONS on Electronics   Vol.E87-C    No.2    pp.212-217
Publication Date: 2004/02/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Oxide Thin Films by Sputtering)
ITO,  low voltage sputtering,  Kr gas sputtering,  Xe gas sputtering,  low temperature deposition,  

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Indium tin oxide (ITO) films were deposited at a temperature below 50 by a low-voltage sputtering system. The sputtering voltage was fixed at 100 V and Ar, Kr, and Xe were used as the sputtering gases. Compared with the sputtering in Ar gas, the sputtering in Kr or Xe gas caused a significant suppression of crystallization of the deposited film and resulted in the formation of amorphous films. These films had much lower resistivities than the films deposited using Ar gas, since the Hall mobility of the films had a larger value. Typical Hall mobility and carrier density are 50 cm2/Vsec, and 51020 cm-3, respectively. This improvement was attributable to the reduction of high-energy particle bombardment to the film surface in the sputtering. These films are stable at a temperature below 150, and crystallization occurs at a temperature above 150.