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Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model
Hong-Hsin LAI Chao-Chih HSIAO Chin-Wei KUO Yi-Jen CHAN Takuro SATO
IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
CMOS, microwave large-signal model, linearity improvement,
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A modified 0.35 µm gate-length MOSFET large-signal microwave device model, based on the widely used BSIM3 model, is presented in this report. This large-signal microwave model includes a BSIM3 model together with the passive components required to fit the device dc and microwave characteristics over a wide range of biasing points and frequency operation. In this report, we propose a methodology to improve the device microwave linearity by controlling a suitable biasing condition, which is based on the predictions of this modified CMOS large-signal model. The input IM3 enhances more than 10 dB at a 2.4 GHz operation. Furthermore, the adjacent channel power ratio also improves 7.5 dB with proper choosing device dc bias.