Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model

Hong-Hsin LAI  Chao-Chih HSIAO  Chin-Wei KUO  Yi-Jen CHAN  Takuro SATO  

IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.1   pp.76-80
Publication Date: 2004/01/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
CMOS,  microwave large-signal model,  linearity improvement,  

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A modified 0.35 µm gate-length MOSFET large-signal microwave device model, based on the widely used BSIM3 model, is presented in this report. This large-signal microwave model includes a BSIM3 model together with the passive components required to fit the device dc and microwave characteristics over a wide range of biasing points and frequency operation. In this report, we propose a methodology to improve the device microwave linearity by controlling a suitable biasing condition, which is based on the predictions of this modified CMOS large-signal model. The input IM3 enhances more than 10 dB at a 2.4 GHz operation. Furthermore, the adjacent channel power ratio also improves 7.5 dB with proper choosing device dc bias.