Electrical Properties of SiN/HfO2/SiON Gate Stacks with High Thermal Stability

Yusuke MORISAKI  Takayuki AOYAMA  Yoshihiro SUGITA  Kiyoshi IRINO  Toshihiro SUGII  Tomoji NAKAMURA  

IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.1   pp.37-43
Publication Date: 2004/01/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics)
high-κ,  HfO2,  gate dielectric,  thermal stability,  

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The characteristics of HfO2 gate stacks, which consisted of the SiN layer deposited between the HfO2 and poly-Si gate electrode and the SiON interfacial layer were investigated. The SiN layer played important role to reduce the leakage current caused by the defect of the crystallized HfO2. The SiN layer was also effective to achieve the prevention of the interfacial reaction, the suppression of dopant penetration. Furthermore, that stack structure indicated excellent TDDB reliability fabricated by conventional high temperature processes.