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Electrical Properties of SiN/HfO2/SiON Gate Stacks with High Thermal Stability
Yusuke MORISAKI Takayuki AOYAMA Yoshihiro SUGITA Kiyoshi IRINO Toshihiro SUGII Tomoji NAKAMURA
IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics)
high-κ, HfO2, gate dielectric, thermal stability,
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The characteristics of HfO2 gate stacks, which consisted of the SiN layer deposited between the HfO2 and poly-Si gate electrode and the SiON interfacial layer were investigated. The SiN layer played important role to reduce the leakage current caused by the defect of the crystallized HfO2. The SiN layer was also effective to achieve the prevention of the interfacial reaction, the suppression of dopant penetration. Furthermore, that stack structure indicated excellent TDDB reliability fabricated by conventional high temperature processes.