Characterization of HfO2 Films Prepared on Various Surfaces for Gate Dielectrics

Takashi YAMAMOTO  Yukiko IZUMI  Naoyuki SUGIYAMA  Kazuhiro YOSHIKAWA  Hideki HASHIMOTO  Yoshihiro SUGITA  

IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.1   pp.17-23
Publication Date: 2004/01/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics)
high-κ gate dielectrics,  HfO2,  ALD,  TEM,  SIMS,  XPS,  FT-IR ATR,  EXAFS,  

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We prepared HfO2 films by atomic layer deposition (ALD) on three kinds of silicon substrate surfaces (chemical oxide, HF-last surface and thermal oxide), and characterized their morphologies, structures, compositions, and crystallinities by physical analysis. The results revealed that the as-deposited HfO2 films consisted of nano-crystalline particles with a different crystalline system from that of the annealed films. The size of the nano-crystalline particles on the film on the chemical oxide was smaller than those on the other surfaces. The reason is thought to be the difference in OH concentration on the substrate surface. The predominant crystalline phases of all HfO2 films were monoclinic after annealing. Moreover, the film prepared on the chemical oxide had the smoothest surface after annealing. However, island structures with grain boundaries developed in the films on the other surfaces.