Fabrication of Organic Transistors Using BEDT-TTF and (BEDT-TTF)(TCNQ) CT-Complex Films

Hirotaka SAKUMA  Masatoshi SAKAI  Masaaki IIZUKA  Masakazu NAKAMURA  Kazuhiro KUDO  

IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.12   pp.2049-2052
Publication Date: 2004/12/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Organic Molecular Electronics)
Category: Characterization and Abilities of Organic Electronic Devices
organic field-effect-transistors,  bipolar operation,  charge-transfer complex,  

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Organic field-effect transistors (FETs) which employ (BEDT-TTF)(TCNQ) films for active layer have been fabricated and characterized. Their FET characteristics exhibited both p-channel and n-channel operation by changing the gate and drain voltages. For a particular bias condition, the I-V curves revealed behavior where both electrons and holes simultaneously are injected from source and drain electrodes. These bipolar type characteristics are strongly related to the structure of donor and acceptor molecular layers. The degree of charge transfer of approximately 0.2 was estimated by Raman spectroscopy.