Design of Flash Analog-to-Digital Converters Using Resonant-Tunneling Circuits

Yuuki TSUJI  Takao WAHO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.11   pp.1863-1868
Publication Date: 2004/11/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on New System Paradigms for Integrated Electronics)
Category: 
Keyword: 
resonant-tunneling diode,  flash analog-to-digital converter,  HEMT,  InP,  multi-input gate,  

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Summary: 
Ultrahigh-speed compact flash analog-to-digital converters (ADCs) using resonant-tunneling diodes (RTDs) have been designed to demonstrate a high potential of RTD circuits. Novel multi-input subtraction gates are introduced to the encoder to obtain a compact circuit configuration. By assuming 0.1-µm InP-based RTD/HEMT technology, circuit simulations of 4-bit 10-GHz flash ADCs are carried out. It is found that the device counts of the ADC with an 8-input gate are one third that of the ADC with 4-input gates. This leads to a reduction in the power dissipation by 50%. In addition, bandwidths of more than 20 GHz have been obtained for 4-bit and 5-bit ADCs at a sampling frequency of 10 GHz.