Design and Application of Ferroelectric Memory Based Nonvolatile SRAM

Shoichi MASUI  Tsuzumi NINOMIYA  Takashi OHKAWA  Michiya OURA  Yoshimasa HORII  Nobuhiro KIN  Koichiro HONDA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E87-C   No.11   pp.1769-1776
Publication Date: 2004/11/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on New System Paradigms for Integrated Electronics)
Category: 
Keyword: 
ferroelectric material,  nonvolatile memory,  programming,  SoC,  programmable logic devices,  

Full Text: PDF>>
Buy this Article




Summary: 
Circuit techniques to realize stable recall operation and virtually unlimited read/program cycle operations in ferroelectric memory based nonvolatile (NV) SRAM composed of six-transistor and four-ferroelectric capacitor cells have been developed. Unlimited program cycle operation independent of ferroelectric material characteristics is realized by proper control of plate lines. Reliability evaluation results show that the developed memory cell has sufficient operation margin after stresses of temperature, fatigue, DC bias. Application of NV-SRAM to programmable logic devices has been discussed with a prototype of dynamically programmable gate arrays.