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Improving RF CMOS Active Inductor by Simple Loss Compensation Network
Chen-Yi LEE Jyh-Neng YANG Yi-Chang CHENG
IEICE TRANSACTIONS on Communications
Publication Date: 2004/06/01
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Communication Devices/Circuits
active inductor, internal loss, inductance, power dissipation, Q value,
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An RF CMOS active inductor with a novel loss compensation circuit network is proposed. Performance of this active inductor can be improved by adding a novel network, which simultaneously reduces parallel and series losses. Consequently, this technique not only increases Q value, inductance, and operating frequency, but also reduces power consumption and circuit complexity. Simulation results show that better performance indices can be achieved, such as minimum total equivalent loss of 1 mΩ, maximum Q value about 3E5, and inductance value from 20 nH to 45 nH in the RF range of 0.6 GHz to 1.6 GHz. Power dissipation is around 1.76 mW under 2.5 V dc supply voltage.