Improving RF CMOS Active Inductor by Simple Loss Compensation Network

Chen-Yi LEE  Jyh-Neng YANG  Yi-Chang CHENG  

Publication
IEICE TRANSACTIONS on Communications   Vol.E87-B   No.6   pp.1681-1683
Publication Date: 2004/06/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Communication Devices/Circuits
Keyword: 
active inductor,  internal loss,  inductance,  power dissipation,  Q value,  

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Summary: 
An RF CMOS active inductor with a novel loss compensation circuit network is proposed. Performance of this active inductor can be improved by adding a novel network, which simultaneously reduces parallel and series losses. Consequently, this technique not only increases Q value, inductance, and operating frequency, but also reduces power consumption and circuit complexity. Simulation results show that better performance indices can be achieved, such as minimum total equivalent loss of 1 mΩ, maximum Q value about 3E5, and inductance value from 20 nH to 45 nH in the RF range of 0.6 GHz to 1.6 GHz. Power dissipation is around 1.76 mW under 2.5 V dc supply voltage.