Power Electronics Innovation with Next Generation Advanced Power Devices

Hiromichi OHASHI  Ichiro OMURA  Satoshi MATSUMOTO  Yukihiko SATO  Hiroshi TADANO  Itaru ISHII  

Publication
IEICE TRANSACTIONS on Communications   Vol.E87-B   No.12   pp.3422-3429
Publication Date: 2004/12/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on the 25th International Telecommunications Energy Conference (INTELEC'03))
Category: 
Keyword: 
power electronics road map,  power devices,  output power density,  wide band-gap semiconductors,  electric power network,  

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Summary: 
Next generation advanced power devices show remarkable progress in wide band-gap power devices such as silicon carbide and gallium nitride devices, as well as novel silicon devices called as super junction FETs and so on. The future direction of power electronics applications is surveyed in terms of output power density as an index of future power electronics development, instead of the power conversion efficiency, taking the device progress in sight. Over the last 30 years, the output power density of power electronics apparatuses has increased by a factor of two figures. New markets, such as a power supply for future generation CPU, a compact unit inverter and a electric vehicle-driving inverter unit, are expected to grow rapidly from 2010 to 2015 with the advance in the out power density of power converter. The possibility of power electronics innovation with progress in the output power density will be discussed in conjunction with development of next generation advanced power devices and related technologies.