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Automatic Extraction of Layout-Dependent Substrate Effects for RF MOSFET Modeling
Zhao LI Ravikanth SURAVARAPU Kartikeya MAYARAM C.-J. Richard SHI
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2004/12/01
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: Device Modeling
RF circuit design, RF transistor modeling, Layout-dependent substrate models, Pattern-based layout extraction,
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This paper presents CrtSmile--a CAD tool for the automatic extraction of layout-dependent substrate effects for RF MOSFET modeling. CrtSmile incorporates a new scalable substrate model, which depends not only on the geometric layout information of a transistor (the number of gate fingers, finger width, channel length and bulk contact location), but also on the transistor layout and bulk patterns. We show that this model is simple to extract and has good agreement with measured data for a 0.35 µm CMOS process. CrtSmile reads in the layout information of RF transistors in the CIF/GDSII format, performs a pattern-based layout extraction to recognize the transistor layout and bulk patterns. A scalable layout-dependent substrate model is automatically generated and attached to the standard BSIM3 device model as a sub-circuit for use in circuit simulation. A low noise amplifier is evaluated with the proposed CrtSmile tool, showing the importance of layout effects for RF transistor substrate modeling.