A Low Quiescent Current CV/CC Parallel Operation HBT Power Amplifier for W-CDMA Terminals

Shintaro SHINJO
Kazutomi MORI
Hiro-omi UEDA
Akira OHTA
Hiroaki SEKI
Tadashi TAKAGI

IEICE TRANSACTIONS on Electronics   Vol.E86-C    No.8    pp.1444-1450
Publication Date: 2003/08/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
microwave,  power amplifier,  heterojunction bipolar transistor (HBT),  inductor base feed,  resistor base feed,  

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A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32 mA to 23 mA with adjacent channel leakage power ratio (ACPR) < -40.0 dBc. At the maximum output power region, the fabricated PA achieves output power (Pout) of 26.8 dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0 dBc, and shows the comparable performances with a conventional PA using CV mode HBT.