IEICE Trans - Applications of GaN Microwave Electronic Devices

Applications of GaN Microwave Electronic Devices

Sebastien NUTTINCK  Edward GEBARA  Baskar BANERJEE  Sunitha VENKATARAMAN  Joy LASKAR  Herbert M. HARRIS

Publication
IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.8   pp.1409-1415
Publication Date: 2003/08/01
Online ISSN:
DOI:
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category:
Keyword:
AlGaN/GaN HFET,  power,  low noise,  high temperatures,  modulator driver,

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Summary:
We report in this paper, the performance of AlGaN/GaN HFETs in the context of high power, low noise and high temperature operations, along with a comparison of their characteristics with other conventional technologies. Finally, a single stage modulator driver for long haul optical communications is presented as an example of application of the GaN-based devices high power handling capabilities.