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Applications of GaN Microwave Electronic Devices
Sebastien NUTTINCK Edward GEBARA Baskar BANERJEE Sunitha VENKATARAMAN Joy LASKAR Herbert M. HARRIS
IEICE TRANSACTIONS on Electronics
Publication Date: 2003/08/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
AlGaN/GaN HFET, power, low noise, high temperatures, modulator driver,
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We report in this paper, the performance of AlGaN/GaN HFETs in the context of high power, low noise and high temperature operations, along with a comparison of their characteristics with other conventional technologies. Finally, a single stage modulator driver for long haul optical communications is presented as an example of application of the GaN-based devices high power handling capabilities.