Applications of GaN Microwave Electronic Devices

Sebastien NUTTINCK  Edward GEBARA  Baskar BANERJEE  Sunitha VENKATARAMAN  Joy LASKAR  Herbert M. HARRIS  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.8   pp.1409-1415
Publication Date: 2003/08/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: 
Keyword: 
AlGaN/GaN HFET,  power,  low noise,  high temperatures,  modulator driver,  

Full Text: PDF>>
Buy this Article




Summary: 
We report in this paper, the performance of AlGaN/GaN HFETs in the context of high power, low noise and high temperature operations, along with a comparison of their characteristics with other conventional technologies. Finally, a single stage modulator driver for long haul optical communications is presented as an example of application of the GaN-based devices high power handling capabilities.