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Dispersion Mechanisms in AlGaN/GaN HFETs
Sebastien NUTTINCK Edward GEBARA Stephane PINEL Joy LASKAR
Publication
IEICE TRANSACTIONS on Electronics
Vol.E86-C
No.8
pp.1400-1408 Publication Date: 2003/08/01 Online ISSN:
DOI: Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology) Category: Keyword: AlGaN/GaN HFET, traps, current collapse, floating body, self-heating,
Full Text: PDF>>
Summary:
We report the investigation of major dispersion mechanisms such as self-heating, trapping, current collapse, and floating-body effects present in AlGaN/GaN HFETs. These effects are analyzed using DC/Pulsed IV, load-pull, low-frequency noise systems, and a cryogenic probe station. This study leads to a better understanding of the device physics, which is critical for accurate large-signal modeling and device optimization.
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