Dispersion Mechanisms in AlGaN/GaN HFETs

Sebastien NUTTINCK  Edward GEBARA  Stephane PINEL  Joy LASKAR  

IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.8   pp.1400-1408
Publication Date: 2003/08/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
AlGaN/GaN HFET,  traps,  current collapse,  floating body,  self-heating,  

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We report the investigation of major dispersion mechanisms such as self-heating, trapping, current collapse, and floating-body effects present in AlGaN/GaN HFETs. These effects are analyzed using DC/Pulsed IV, load-pull, low-frequency noise systems, and a cryogenic probe station. This study leads to a better understanding of the device physics, which is critical for accurate large-signal modeling and device optimization.