Dispersion Mechanisms in AlGaN/GaN HFETs

Sebastien NUTTINCK
Edward GEBARA
Stephane PINEL
Joy LASKAR

Publication
IEICE TRANSACTIONS on Electronics   Vol.E86-C    No.8    pp.1400-1408
Publication Date: 2003/08/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: 
Keyword: 
AlGaN/GaN HFET,  traps,  current collapse,  floating body,  self-heating,  

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Summary: 
We report the investigation of major dispersion mechanisms such as self-heating, trapping, current collapse, and floating-body effects present in AlGaN/GaN HFETs. These effects are analyzed using DC/Pulsed IV, load-pull, low-frequency noise systems, and a cryogenic probe station. This study leads to a better understanding of the device physics, which is critical for accurate large-signal modeling and device optimization.