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Dispersion Mechanisms in AlGaN/GaN HFETs
IEICE TRANSACTIONS on Electronics
Publication Date: 2003/08/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
AlGaN/GaN HFET, traps, current collapse, floating body, self-heating,
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We report the investigation of major dispersion mechanisms such as self-heating, trapping, current collapse, and floating-body effects present in AlGaN/GaN HFETs. These effects are analyzed using DC/Pulsed IV, load-pull, low-frequency noise systems, and a cryogenic probe station. This study leads to a better understanding of the device physics, which is critical for accurate large-signal modeling and device optimization.