Low Voltage Low Phase Noise CMOS VCO and Its Flicker Noise Influence

Nobuyuki ITOH

IEICE TRANSACTIONS on Electronics   Vol.E86-C    No.6    pp.1062-1068
Publication Date: 2003/06/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems)
fully integrated VCO,  spiral inductor,  phase noise,  low voltage,  flicker noise,  

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The low phase noise, low supply voltage 1.3 GHz CMOS VCO has been realized by 0.25 µm standard CMOS technology without any trimming and any tuning. The phase noise characteristics of -109 dBc/Hz and -123 dBc/Hz at 100 kHz offset and 500 kHz offset were achieved from carrier, respectively, with 1.3 GHz oscillation frequency at 1.4 V supply voltage. The performance of 1.4 V supply voltage phase noise was superior to that of 2.0 V supply voltage phase noise due to low output impedance current source. The tuning ranges of 13.3%, 16.6%, and 20.1% for 1.4 V, 1.8 V, and 2.0 V supply voltage were achieved, respectively. The amplifier consisted of one pair of PMOS differential stage with large gate length NMOS current source to realize low supply voltage operation and to avoid flicker noise contribution for phase noise. The on-chip spiral inductor consisted of three terminals arranged in a special shape to obtain high Q and small chip area. The power dissipation of this VCO was 22.4 mW without buffer amplifier.