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A Three-Mode Switched-LNA Using a Low Parasitic Capacitance MOSFET Switch
Toshifumi NAKATANI Koichi OGAWA Junji ITOH Ikuo IMANISHI
IEICE TRANSACTIONS on Electronics
Publication Date: 2003/06/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems)
low noise amplifier, noise figure, MOSFET switch, parasitic capacitance, 3rd-order intercept point, dissipation power, cross-modulation,
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A three-mode switched-LNA has been developed using a 0.25 µm SiGe BiCMOS technology. The LNA features low noise figure (NF) performance, while achieving both low dissipation power and low distortion characteristics. The proposed MOSFET switch incorporating a newly developed switch circuit with a triple-well structure, which changes the LNA's mode, provides a parasitic capacitance of just 0.52 times that of a conventional MOSFET switch. This results in a significant NF improvement, by 0.16-0.33 dB, for the three-mode switched-LNA compared to a conventional LNA. Extensive studies of the MOSFET switch with regard to the structural parameters and the doping profiles are reported. Experimental results and the overall performance of a trial IC incorporating the three-mode switched-LNA are also given.