Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs

Takako YASUI  Tomofumi FURUTA  Tadao ISHIBASHI  Hiroshi ITO  

IEICE TRANSACTIONS on Electronics   Vol.E86-C    No.5    pp.864-866
Publication Date: 2003/05/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Lasers, Quantum Electronics
photodiode,  uni-travelling-carrier photodiode,  high power optical input,  failure,  

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The power dissipation tolerances for InP/ InGaAs uni-travelling-carrier photodiodes (UTC-PDs) and pin-PDs under high power optical inputs are compared. Catastrophic failures occur at constant power dissipations of 240 and 160mW for the UTC-PDs and pin-PDs, respectively. Scanning electron microscope observations confirm that the areas of destruction are located in the high electric-field region in the depletion layer.