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Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs
Takako YASUI Tomofumi FURUTA Tadao ISHIBASHI Hiroshi ITO
IEICE TRANSACTIONS on Electronics
Publication Date: 2003/05/01
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Lasers, Quantum Electronics
photodiode, uni-travelling-carrier photodiode, high power optical input, failure,
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The power dissipation tolerances for InP/ InGaAs uni-travelling-carrier photodiodes (UTC-PDs) and pin-PDs under high power optical inputs are compared. Catastrophic failures occur at constant power dissipations of 240 and 160mW for the UTC-PDs and pin-PDs, respectively. Scanning electron microscope observations confirm that the areas of destruction are located in the high electric-field region in the depletion layer.