8cm-2. On the nano-seeded Si substrates the continuous and homogeneous diamond films can be successfully fabricated using a microwave plasma enhanced chemical-vapor-deposition (MPECVD) equipment. The cross-sectional transmission electron microscopy (TEM) images reveal that compare with the diamond films grown on the Si substrates pretreated by the conventional scratching method, the films deposited on the nano-seeded Si substrates present a much flatter interfacial structure, suggesting that the SW seeding way can effectively reduce the interface coarseness." />


Seeding Diamond Nanocrystals on Si Substrates for Deposition of Diamond Films

Nan JIANG  Kazuhito NISHIMURA  Yoshihiro SHINTANI  Akio HIRAKI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E86-C    No.5    pp.811-815
Publication Date: 2003/05/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Field Electron Emission from Carbon Materials)
Category: 
Keyword: 
diamond film,  seeding,  pretreatment,  MPECVD,  

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Summary: 
Seeding substrates with diamond nanocrystals has been considered to be a promising nondestructive pretreatment method for growth of diamond films. However, its application is strongly impeded by the segregation of diamond nanocrystals on substrates. In the present study, we suggest a very simple but effective seeding way ("sandwich" (SW) seeding way) to prevent nanocrystals from segregation. By the SW seeding way, the diamond nanocrystals can be nearly uniformly dispersed on Si substrates with the areal density of the order of 108cm-2. On the nano-seeded Si substrates the continuous and homogeneous diamond films can be successfully fabricated using a microwave plasma enhanced chemical-vapor-deposition (MPECVD) equipment. The cross-sectional transmission electron microscopy (TEM) images reveal that compare with the diamond films grown on the Si substrates pretreated by the conventional scratching method, the films deposited on the nano-seeded Si substrates present a much flatter interfacial structure, suggesting that the SW seeding way can effectively reduce the interface coarseness.