Highly Efficient Electron Emissions from Single-Crystalline CVD Diamond Surfaces

Toshimichi ITO

Publication
IEICE TRANSACTIONS on Electronics   Vol.E86-C    No.5    pp.797-802
Publication Date: 2003/05/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Field Electron Emission from Carbon Materials)
Category: 
Keyword: 
CVD diamond,  electron emission,  impact ionization,  high efficiency,  

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Summary: 
Electron emissions from single-crystalline diamond surfaces by internally exciting electrons from the valence to conduction bands have been investigated. Monte Carlo simulations have been employed to estimate the impact ionization rates of carriers in diamond under high electric fields up to 1107V/cm. The calculations demonstrate substantial impact ionization rates which rapidly increase with increasing electric fields above 8105V/cm. Highly efficient electron emissions with high emission current efficiencies of approximate unity have been attained from a MIS-type diamond layered structure that are composed of heavily ion-implanted buried layer (M), undoped diamond (I) and hydrogenated p-type diamond (S) with an emission surface of a negative electron affinity. The highly efficient emission mechanism is discussed in relation to the field excitation of electrons from the valence band to the conduction band in the undoped diamond layer and the carrier transport to the diamond surface.