1.3µm AlGaInAs MQW Inner-Stripe Laser Diodes

Ryusuke NAKASAKI  Mitsumasa ITO  Satoshi ARAKAWA  Akihiko KASUKAWA  

IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.5   pp.749-752
Publication Date: 2003/05/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
AlGaInAs,  laser,  waveguide,  high power,  

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We fabricated 1.3µm AlGaInAs inner-stripe laser diodes (LDs), employing a GaInAsP waveguide layer and an n-InP current blocking layer. We compared the effects of the thickness of n-InP current blocking layer. A blocking layer with 500nm thick restricts the leakage current significantly. The inner-stripe LD was compared with the conventional ridge LD. I-L characteristics of both types of LDs were measured. Threshold currents of the inner-stripe LD and the ridge LD were 8.5 and 10.6mA, respectively. A threshold current of the inner-stripe LD is smaller than that of ridge LD. And the resistance of the inner-stripe LD was a few ohms lower than that of the ridge LD. Output power of 88mW was obtained at 200mA with 300µ m-long cavity. This was twice the power of a conventional ridge laser. The characteristic temperature of the inner-stripe LD was obtained 76 K from 20 to 85. We obtained a good linearity up to 100mA at 85. Therefore the inner-stripe LD has an advantage of high power devices.