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An Embedded DRAM Hybrid Macro with Auto Signal Management and Enhanced-on-Chip Tester
Naoya WATANABE Fukashi MORISHITA Yasuhiko TAITO Akira YAMAZAKI Tetsushi TANIZAKI Katsumi DOSAKA Yoshikazu MOROOKA Futoshi IGAUE Katsuya FURUE Yoshihiro NAGURA Tatsunori KOMOIKE Toshinori MORIHARA Atsushi HACHISUKA Kazutami ARIMOTO Hideyuki OZAKI
IEICE TRANSACTIONS on Electronics
Publication Date: 2003/04/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on High-Performance, Low-Power System LSIs and Related Technologies)
Category: Design Methods and Implementation
embedded DRAM, various DRAM macros, low voltage operation, short TAT, BIST,
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This paper describes an Embedded DRAM Hybrid Macro, which supports various memory specifications. The eDRAM module generator with Hybrid Macro provides more than 120,000 eDRAM configurations. This eDRAM includes a new architecture called Auto Signal Management (ASM) architecture, which automatically adjusts the timing of the control signals for various eDRAM configurations, and reduces the design Turn Around Time. An Enhanced-on-chip Tester performs the maximum 512b I/O pass/fail simultaneous judgments and the real time repair analysis. The eDRAM testing time is reduced to about 1/64 of the time required using the conventional technique. A test chip is fabricated using a 0.18 µm 4-metal embedded DRAM technology, which utilizes the triple-well, dual-Tox, and Co salicide process technologies. This chip achieves a wide voltage range operation of 1.2 V at 100 MHz to 1.8 V at 200 MHz.