MRAM Writing Circuitry to Compensate for Thermal Variation of Magnetization Reversal Current

Takeshi HONDA  Noboru SAKIMURA  Tadahiko SUGIBAYASHI  Hideaki NUMATA  Sadahiko MIURA  Hiromitsu HADA  Shuichi TAHARA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.4   pp.612-617
Publication Date: 2003/04/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on High-Performance, Low-Power System LSIs and Related Technologies)
Category: Circuit Design
Keyword: 
MRAM,  magnetization reversal current,  thermal-variation compensation,  

Full Text: PDF(1.2MB)>>
Buy this Article




Summary: 
MRAM-writing circuitry to compensate for the thermal variation of the magnetization-reversal current is proposed. The writing current of the proposed circuitry is designed to decrease in proportion to an increase in temperature. This technique prevents multiple-write failures from degrading 1 Gb MRAM yield where the standard deviation of magnetization-reversal current variation from other origins is less than 5%.