For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
MRAM Writing Circuitry to Compensate for Thermal Variation of Magnetization Reversal Current
Takeshi HONDA Noboru SAKIMURA Tadahiko SUGIBAYASHI Hideaki NUMATA Sadahiko MIURA Hiromitsu HADA Shuichi TAHARA
IEICE TRANSACTIONS on Electronics
Publication Date: 2003/04/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on High-Performance, Low-Power System LSIs and Related Technologies)
Category: Circuit Design
MRAM, magnetization reversal current, thermal-variation compensation,
Full Text: PDF(1.2MB)>>
MRAM-writing circuitry to compensate for the thermal variation of the magnetization-reversal current is proposed. The writing current of the proposed circuitry is designed to decrease in proportion to an increase in temperature. This technique prevents multiple-write failures from degrading 1 Gb MRAM yield where the standard deviation of magnetization-reversal current variation from other origins is less than 5%.