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Simulation of Substrate Currents
Wim SCHOENMAKER Peter MEURIS Wim MAGNUS Bert MALESZKA
IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
substrate, electromagnetic fields, ghost fields,
Full Text: PDF(726.4KB)>>
Recently, a new approach was presented to determine the high-frequency response of on-chip passives and interconnects. The method solves the electric scalar and magnetic vector potentials in a prescribed gauge. The latter one is included by introducing an additional independent scalar field, whose field equation needs to be solved. This additional field is a mathematical aid that allows for the construction of a gauge-conditioned, regular matrix representation of the curl-curl operator acting on edge elements. This paper reports on the convergence properties of the new method and shows the first results of this new calculation scheme for VLSI-based structures at high frequencies. The high-frequent behavior of the substrate current, the skin effect and current crowding is evaluated.