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Hot Carrier Induced Degradation Due to Multi-Phonon Mechanism Analyzed by Lattice and Device Monte Carlo Coupled Simulation
Shirun HO Yasuyuki OHKURA Takuya MARUIZUMI Prasad JOSHI Naoki NAKAMURA Shoichi KUBO Sigeo IHARA
IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
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A new multi-phonon model for hydrogen desorption at Si/SiO2 interface due to hot carriers is proposed for a multi-scale simulation, in which Lattice Monte Carlo method is coupled with Device Monte Carlo method by using a mediator-based common software platform. The power law between interface trap density and time (Nit tα) of which power α =0.5 is demonstrated and shows good agreement with experimental results. Dependence of Vth shift on the current stress time is analyzed accurately by introducing an electron trap model. According to the multi-phonon mechanism, it is found that hot carriers will generate defects on the gate dielectrics in 13 nm gate device under low operation voltage of Vd=0.5 V but density of interface traps after long stress time is suppressed to 1015 m-2.