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Technology Modeling for Emerging SOI Devices
Meikei IEONG Phil OLDIGES
IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
TCAD, device modeling, silicon-on-insulator, strained-silicon, double-gate,
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New physical models, algorithms, and parameters are needed to accurately model emerging silicon-on-insulator (SOI) devices. The modeling approaches for various emerging SOI technologies are discussed in this paper.