A High-Speed Current-Mode Multilevel Identifying Circuit for Flash Memories

Hongchin LIN
Funian LIANG

Publication
IEICE TRANSACTIONS on Electronics   Vol.E86-C    No.2    pp.229-235
Publication Date: 2003/02/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Electronic Circuits
Keyword: 
current-mode,  multilevel identifying circuit,  flash memory,  sense amplifier,  offset,  

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Summary: 
A parallel current-mode multilevel identifying circuit for flash memories is proposed. The sensing scheme based on the CMOS cross-coupled structure modified from the clamped bit-line sense amplifier achieves high speed and low power dissipation. The offset of the proposed sense amplifier due to mismatch is also reduced significantly. The circuit has been fabricated using 0.6 µm CMOS technology. The simulation and measurement indicate the sensing speed reaches 1 ns at 3 V supply voltage with average power consumption about 2 mW at 50 MHz.