Fundamental Perspective of Future High Power Devices and Amplifiers for Wireless Communication Systems

Yasushi ITOH  Kazuhiko HONJO  

IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.2   pp.108-119
Publication Date: 2003/02/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Circuit and Device Technology for High-Speed Wireless Communication)
microwaves,  amplifier,  device,  wireless communication system,  

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Fundamental perspective of high power devices and amplifiers for use in wireless communication systems are described in this paper. First, high power devices and device modeling techniques are presented, focusing on the emerging device technologies such as wide bandgap devices (GaN, SiC) and SiGe devices. Then the commercially available device, circuit and system simulators for wireless communication applications are introduced. Recent active load-pull measurements have made a remarkable progress in fundamental, harmonic, and envelope frequencies for high efficiency and low distortion designs. In addition, pulsed DC/RF and on wafer load-pull measurements have also become popular, which are briefly reviewed. Finally the advances in high power amplifier design techniques for achieving high efficiency and low distortion are presented.