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Thermal Stability of W2N Compound Barrier in W/W2N/poly-Si Gate Electrode Configuration
Atsushi NOYA Mayumi B. TAKEYAMA
IEICE TRANSACTIONS on Electronics
Publication Date: 2003/11/01
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Electronic Materials
metallization, MOS, gate electrode, WNx,
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A high temperature performance of a W2N compound barrier in the model electrode configuration of W/W2N/poly-Si was examined. The stacked electrode was fairly stable upon annealing at 850 for 1 h. In this electrode configuration, the decomposition and outdiffusion of nitrogen, which were observed in the electrode with a WNx barrier incorporating nitrogen atoms at the interstitial sites in the bcc W lattice, were completely suppressed. We interpreted that the obtained excellent high temperature performance was attributed to the strong chemical interaction forming chemical bonds between nitrogen and W atoms in the W2N compound barrier.