Low-Temperature MBE Growth of a TlGaAs/GaAs Multiple Quantum-Well Structure

Naoki NISHIMOTO  Nobuhiro KOBAYASHI  Naoyuki KAWASAKI  Yasuaki HIGUCHI  Yasutomo KAJIKAWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.10   pp.2082-2084
Publication Date: 2003/10/01
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
TlGaAs,  molecular-beam epitaxy,  X-ray diffraction,  quantum well,  

Full Text: PDF>>
Buy this Article




Summary: 
A TlGaAs/GaAs multiple quantum-well (MQW) structure having four identical well layers was grown on a GaAs (001) substrate by low-temperature molecular-beam epitaxy (MBE) at 190. The (004) X-ray diffraction (XRD) curve of this sample showed satellite peaks up to the 3rd order at least. The measured XRD curve agreed well with the theoretically simulated one with a Tl content of x=7% and a width of 57 for the TlxGa1-xAs well layers. This result indicates that the grown MQW structure has good single-crystalline quality as well as flat and sharp interfaces.