Publication IEICE TRANSACTIONS on ElectronicsVol.E86-CNo.10pp.2082-2084 Publication Date: 2003/10/01 Online ISSN: DOI: Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: TlGaAs, molecular-beam epitaxy, X-ray diffraction, quantum well,
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Summary: A TlGaAs/GaAs multiple quantum-well (MQW) structure having four identical well layers was grown on a GaAs (001) substrate by low-temperature molecular-beam epitaxy (MBE) at 190. The (004) X-ray diffraction (XRD) curve of this sample showed satellite peaks up to the 3rd order at least. The measured XRD curve agreed well with the theoretically simulated one with a Tl content of x=7% and a width of 57 for the TlxGa1-xAs well layers. This result indicates that the grown MQW structure has good single-crystalline quality as well as flat and sharp interfaces.
. The (004) X-ray diffraction (XRD) curve of this sample showed satellite peaks up to the 
3rd order at least. The measured XRD curve agreed well with the theoretically simulated one with a Tl content of x=7% and a width of 57 
for the TlxGa1-xAs well layers. This result indicates that the grown MQW structure has good single-crystalline quality as well as flat and sharp interfaces.