Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Makoto MIYOSHI  Masahiro SAKAI  Hiroyasu ISHIKAWA  Takashi EGAWA  Takashi JIMBO  Mitsuhiro TANAKA  Osamu ODA  

IEICE TRANSACTIONS on Electronics   Vol.E86-C   No.10   pp.2077-2081
Publication Date: 2003/10/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
AlGaN/GaN,  heterostructure,  MOVPE,  uniformity,  bowing,  

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For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100 mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 µm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.